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| FMB100 Discrete POWER & Signal Technologies FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .NA NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA =25C unless otherwise noted Parameter Value 45 75 6.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA= 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max FMB100 700 5.6 180 Units mW mW/C C/W (c) 1998 Fairchild Semiconductor Corporation FMB100 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA= 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 A, IB = 0 IC = 1 mA, IE = 0 IE = 10 A, IC = 0 VCB = 60 V VCE = 40 V VEB = 4 V 75 45 6.0 50 50 50 V V V nA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 80 100 100 100 450 350 0.2 0.4 0.85 1.0 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure VCE = 20 V, IC = 20 mA VCB = 5.0 V, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RG = 2.0 k, f = 1.0 kHz 300 3.5 2.5 MHz pF dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 400 Vce = 5V 125 C VCESAT COLLECTOR-EMITTER VOLTAGE (V) - h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 25 C 300 25 C 200 - 40 C 0.2 100 0.1 125 C - 40 C 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 1 10 100 I C - COLLECTOR CURRENT (mA) 400 FMB100 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) VBESAT COLLECTOR-EMITTER VOLTAGE (V) - 1 0.8 0.6 0.4 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 - 40 C 25 C 125 C V - BASE-EMITTER ON VOLTAGE (V) BEON Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 125 C - 40 C 25 C 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 = 10 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 10 VCB = 60V CAPACITANCE (pF) 10 100 Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz Cib Cob 1 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) 100 Switching Times vs Collector Current 300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V Power Dissipation vs Ambient Temperature 1 ts PD - POWER DISSIPATION (W) 0.75 SOT-6 0.5 0.25 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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